2SD2130 - Toshiba Semiconductor

2SD2130 Silicon NPN Transistor

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA) · Zener diode included .

Features

nt Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = 45 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IE = 0 IC = 10 mA, IB = 0 IE = 10 mA, IC = 0 VCE = 2 V, IC = 1 A VCE = 2 V, IC = 3 A IC = 3 A, IB = 10 mA IC = 3 A, IB = 10 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MH.