·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM R.
ied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 8mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ hFE DC Current Gain IC= 4A; VCE= 3V 2SD2094 MIN TYP. MAX UNIT 120 V 120 V 7 V 1..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2091 |
Rohm |
NPN Transistor | |
2 | 2SD2091 |
INCHANGE |
NPN Transistor | |
3 | 2SD2092 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
4 | 2SD2093 |
INCHANGE |
NPN Transistor | |
5 | 2SD2093 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistors | |
6 | 2SD2093 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SD2095 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SD2095 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
9 | 2SD2096 |
Rohm |
NPN Transistor | |
10 | 2SD2097 |
Rohm |
Transistor | |
11 | 2SD2098 |
Rohm |
NPN Transistor | |
12 | 2SD2098 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |