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·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency power amplifier amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V.
ETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 80 110 V V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA; IE= 0 80 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1mA ICBO Collector Cutoff Current VCB= 70V; IE= 0 1.5 V 2.0 V 10 μA IEBO Emitter Cutoff Current hFE DC Current Gain COB Output Capacitance fT Current-Gain—Bandwidth Product VEB= 5V; IC= 0 3.0 mA IC= 1A; VCE= 2V 1000 .
2SD2091 - Rohm
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means wi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2092 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SD2093 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD2093 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistors |
|
| 4 | 2SD2093 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD2094 |
Inchange Semiconductor |
Power Transistor |
|
| 6 | 2SD2095 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2095 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 8 | 2SD2096 |
Rohm |
NPN Transistor |
|
| 9 | 2SD2097 |
Rohm |
Transistor |
|
| 10 | 2SD2098 |
Rohm |
NPN Transistor |
|
| 11 | 2SD2098 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 12 | 2SD2098 |
GME |
Transistor |
|