2SD1895 Silicon PNP Transistor Datasheet

2SD1895 Silicon PNP Transistor

Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V .

Features

q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 160 140 5 15 8 100 3 150
–55 to +150 Unit V V V A A W 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction tem.

The same part from a different manufacturer

2SD1895 - SavantIC

·With TO-3PFa package www.datasheet4u.com ·High DC current gain ·Low collector saturation voltage ·Complement to type 2S.

2SD1895 - INCHANGE

·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Low-Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@IC= 7A ·Complem.

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2SD1895 - Panasonic Semiconductor