2SD1891 - INCHANGE

2SD1891 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 3A ·Low Collector Saturation Voltgae- : VCE(sat)= 3.0V(Max.)@ IC= 3A ·Complement to Type 2SB1251 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.

Features

STICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA ICBO Collector Cutoff Current VCB= 110V; IE= 0 ICEO Collector Cutoff current VCE= 90V,IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V Swi.