2SD1879 - INCHANGE

2SD1879 NPN Transistor

·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO.

Features

ining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1300V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 5V VECF C-E Diode Forward Voltage tf Fall Time IF= 6A IC= 4A , IB1= 0.8A ; IB2= -1.6A PW=20μs; Duty Cycle≤1% 2SD1879 MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 10 μA 1.0 mA 40 130 mA 8 5 10 2.0 V 0.3 μs.