·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .
ollector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz MIN TYP. MAX UNIT 80 V 100 V 5 V 1.0 V 1.5 V 10 .
TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package. / Features ,,, 2SB1290 。 Low VCE(sat),excellen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1830 |
Sanyo Semicon Device |
PNP/NPN Transistors | |
2 | 2SD1830 |
INCHANGE |
NPN Transistor | |
3 | 2SD1830 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD1832 |
Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor | |
5 | 2SD1834 |
Rohm |
MEDIUM POWER TRANSISTOR | |
6 | 2SD1835 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor | |
7 | 2SD1835 |
ON Semiconductor |
PNP/NPN Epitaxial Planar Silicon Transistors | |
8 | 2SD1838 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Type Transistors | |
9 | 2SD180 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | 2SD1800 |
Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor | |
11 | 2SD1801 |
ON Semiconductor |
Bipolar Transistor | |
12 | 2SD1801 |
Inchange Semiconductor |
Silicon NPN Power Transistor |