2SD1553 - INCHANGE

2SD1553 NPN Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage.

Features

on Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 500V; IE= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V VECF C-E Diode Forward Voltage IF= 2.5A fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz tf Fall Time ICP= 2A , IB1(end)= 0.6A 2SD1553 MIN TYP. MAX UNIT 5 V 5.0 V 1.5 V 10 μA 8 2.0 V 3 MHz 95 pF 0.5 1.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inf.