2SD1552 - INCHANGE

2SD1552 NPN Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications. ·Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base.

Features

8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE -1 DC Current Gain IC= 1A; VCE= 5V hFE -2 DC Current Gain IC= 4.5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance tf Fall Time IE= 0; VCB= 10V; ftest= 1.0MHz ICP= 4A, IB1(end)= 0.8A 2SD1552 MIN TYP. MAX UNIT 5.0 V 1.5 V 10 μA 1.0 mA 8 5 3 MHz 165 pF 1.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifica.