2SD1545 - INCHANGE

2SD1545 NPN Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter V.

Features

ollector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance tf Fall Time IE= 0; VCB= 10V; ftest= 1.0MHz ICP= 3A, IB1(end)= 0.8A 2SD1545 MIN TYP. MAX UNIT 5.0 V 1.5 V 10 μA 1.0 mA 8 3 MHz 165 pF 0.5 1.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC product.