2SD1542 - INCHANGE

2SD1542 NPN Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Col.

Features

oltage IC= 1A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.3A ICBO Collector Cutoff Current VCB= 500V; IE= 0 5.0 V 1.5 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 3 MHz COB Output Capacitance tf Fall Time IE= 0; VCB= 10V; ftest= 1.0MHz ICP= 1A, IB1(end)= 0.3A 95 pF 1.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only.