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2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD1509 Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Rating.
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 4 kΩ ≈ 800 Ω EMITTER 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SD1509 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage .
2SD1509 - Inchange Semiconductor
·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Coll.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1500 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD1503 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1504 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1505 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1505 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1506 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1506 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD1507M |
Rohm |
NPN Silicon Transistor |
|
| 9 | 2SD1508 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD1510 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD1511 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD1513 |
NEC |
NPN Silicon Transistor |
|