2SD1455 - INCHANGE

2SD1455 NPN Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO .

Features

S Collector Cutoff Current VCE= 1500V; RBE= ∞ hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A 2SD1455 MIN TYP. MAX UNIT 6 V 5.0 V 1.5 V 0.5 mA 8 2.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equi.