2SD1451 - INCHANGE

2SD1451 NPN Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO.

Features

= 1.2A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.2A; IB= 0.3A ICBO Collector Base Cutoff Current VCB=1500V; IE= 0 5.0 V 1.5 V 0.5 mA hFE DC Current Gain IC= 0.3A; VCE= 5V 6 VECF C-E Diode Forward Voltage IF= 1.5A 2.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which re.