·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 4A ·Low Saturation Voltage ·Complement to Type 2SB886 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications. ABSO.
5℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 8mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 4A; VCE= 3V fT Current-Gain—Bandwidth Product IC= 4A; VCE= 5V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 4A, IB1= IB2= 8mA RL= 12.5Ω; V.
·With TO-220 package ·High DC current gain. ·High current capacity and wide ASO. ·Low saturation voltage ·DARLINGTON APP.
Ordering number:928C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB886/2SD1196 Driver Applications Applic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1190 |
Sanyo Semicon Device |
PNP/NPN Transistors | |
2 | 2SD1190 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor | |
3 | 2SD1191 |
Sanyo Semicon Device |
PNP/NPN Transistors | |
4 | 2SD1191 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor | |
5 | 2SD1192 |
Sanyo Semicon Device |
PNP/NPN Transistors | |
6 | 2SD1192 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor | |
7 | 2SD1193 |
Sanyo Semicon Device |
PNP/NPN Transistors | |
8 | 2SD1193 |
INCHANGE |
NPN Transistor | |
9 | 2SD1193 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SD1194 |
Sanyo Semicon Device |
PNP/NPN Transistors | |
11 | 2SD1194 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SD1194 |
INCHANGE |
NPN Transistor |