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2SD1196 |
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| Part Number | 2SD1196 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 4A ·Low Saturation Voltage ·Complement to Type 2SB886 ·Minimum Lot-to-Lot variations for robust ... |
| Features |
5℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 8mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 4A; VCE= 3V
fT
Current-Gain—Bandwidth Product
IC= 4A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A, IB1= IB2= 8mA RL= 12.5Ω; V... |
| Document |
 2SD1196 Data Sheet
PDF 206.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1190 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 2 | 2SD1190 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 3 | 2SD1191 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 4 | 2SD1191 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 5 | 2SD1192 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|