Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·With TO-220 package www.datasheet4u.com ·High speed switching ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid state relay ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1158 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO.
ETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=0.1mA ;IE=0 IE=0.1mA ;IC=0 IC=2A, IB=0.1A IC=2A, IB=0.1A VCB=80V;IE=0 VEB=10V; IC=0 IC=1A ; VCE=5V 250 MIN 50 80 10 www.datasheet4u.com 2SD1158 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V 0.5 1.5 0.1 0.1 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A;IB1=.
2SD1158 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(Min.) @IC= 1A ·Low Collect.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1151 |
ETC |
Si NPN triple diffused planar Transistor |
|
| 2 | 2SD1153 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SD1154 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SD1157 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SD1159 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 6 | 2SD1159 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD1159 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD110 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor |
|
| 9 | 2SD1101 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SD1101 |
Guangdong Kexin Industrial |
Silicon NPN Transistor |
|
| 11 | 2SD1101 |
Renesas |
Silicon NPN Transistor |
|
| 12 | 2SD1105 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor |
|