2SD1138 Silicon NPN Triple Diffused ADE-208-908 (Z) 1st. Edition September 2000 Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2SD1138 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter.
—
Collector output capacitance Cob — 20
Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test.
Max Unit —V
—V
1 µA 320 — 3.0 V
1.0 V — pF
Test conditions IC = 50 mA, RBE = ∞
IE = 5 mA, IC = 0
VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA
*2 IC = 500 mA, IB = 50 mA
*2
VCB = 4 V, IC = 50 mA VCB = 100 V, IE = 0, f = 1 MHz
B 60 to 120
CD 100 to 200 160 to 320
Collector current IC (A)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve 40
30
20 TC
10
1.8 W
Ta
0 50 100 150
Ambient temperature Ta (°C) Case temperature TC (°C)
200
Typic.
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB86.
·With TO-220C package ·Complement to type 2SB861 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical d.
2SD1138 Silicon NPN Triple Diffused ADE-208-908 (Z) 1st. Edition Sep. 2000 Application Low frequency high voltage power .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD113 |
INCHANGE |
NPN Transistor | |
2 | 2SD1133 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
3 | 2SD1133 |
SavantIC |
(2SD1133 / 2SD1134) SILICON POWER TRANSISTOR | |
4 | 2SD1133 |
Renesas |
Silicon NPN Transistor | |
5 | 2SD1133 |
INCHANGE |
NPN Transistor | |
6 | 2SD1134 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
7 | 2SD1134 |
SavantIC |
(2SD1133 / 2SD1134) SILICON POWER TRANSISTOR | |
8 | 2SD1134 |
Renesas |
Silicon NPN Transistor | |
9 | 2SD1134 |
INCHANGE |
NPN Transistor | |
10 | 2SD1135 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
11 | 2SD1135 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SD1135 |
INCHANGE |
NPN Transistor |