2SD1133 - INCHANGE

2SD1133 NPN Transistor

·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

Features

CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V ICBO Collector Cutoff Current VCB= 50V ; IE= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 0.1A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V  hFE-1 Classifications B C D 60-120 100-200 160-320 2SD1133 MIN TYP. MAX UNIT 50 V 70 V 5 V 1.0 V 1.0 V 1 μA 60 320 35 7 MHz NOTICE： ISC reserves the rig.