SHINDENGEN Darlington Transistor 2SD1022 (T5L10) 5A NPN OUTLINE DIMENSIONS Case : TO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55•`+150 •Ž Junction Temperature Tj +150 •Ž Collector to Base Voltage V 100 V CBO Collector to Emitter Voltage V 100 V CEO Emitter to Base Voltage V 7 V EBO Col.
unction to case Max 4.17
•Ž/W Transition Frequency fT V = 10V, = 0.5A I TYP 20 MHz CE C Turn on Time ton Max 2 I = 5A C Storage Time ts I =B2 I = 5mA Max 5ƒÊs B1 R = 5ƒ¶ L Fall Time tf V = 4V Max 3 BB2
2SD1022
hFE - I C
10000
50°C
100°C
Tc = 150°C
DC Current Gain hFE
1000
25°C VCE = 3V Pulse width = 300µs 1 8
0 °C
− 25°C
100
− 55°C
0.1
Collector Current IC [A]
2SD1022
Saturation Voltage
3.2 3A 5A 8A 2.8 2.4 2 5A 3A 8A 1.6 1.2 0.8 0.4
3.2
IC = 0.5A
1A
2.8
2.4
2
1.6
IC = 0.5A 1A
1.2
Collector-Emitter Voltage VCE [V]
0.4
Tc = 25°C Pulse measurement 1 10
0
0 100
Base .
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Satura.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1020 |
NEC |
NPN TRANSISTOR | |
2 | 2SD1023 |
INCHANGE |
NPN Transistor | |
3 | 2SD1023 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor | |
4 | 2SD1023 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1024 |
INCHANGE |
NPN Transistor | |
6 | 2SD1024 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor | |
7 | 2SD1024 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SD1025 |
INCHANGE |
NPN Transistor | |
9 | 2SD1025 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor | |
10 | 2SD1025 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SD1026 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor | |
12 | 2SD1026 |
SavantIC |
SILICON POWER TRANSISTOR |