Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SD1022 |
Click to view a larger image
| Part Number | 2SD1022 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and re... |
| Features |
gton Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 3mA
ICBO
Collector Cutoff Current
VCB= 100V; IE=0
ICEO
Collector Cutoff Current
VCE= 100V; IB=0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE
DC Current Gain
IC= 3A; VCE= 3V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= IB2= 5mA RL= 5Ω; VBB2= 4V
2SD1022
MIN T... |
| Document |
 2SD1022 Data Sheet
PDF 208.24KB |
| Distributor | Stock | Price | Buy |
|---|
