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2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • • High-speed switching: tf = 0.2 μs (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-ba.
nditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 Free Datasheet http://www.datasheet4u.com/ 2SC6042 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Symbo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC6040 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC6041 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC6043 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SC6043 |
ON Semiconductor |
Bipolar Transistor |
|
| 5 | 2SC6044 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC6045 |
Panasonic |
Silicon NPN Transistor |
|
| 7 | 2SC6046 |
Isahaya Electronics |
Silicon NPN Transistor |
|
| 8 | 2SC6000 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC6010 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SC6011 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC6011 |
Allegro MicroSystems |
Audio Amplification Transistor |
|
| 12 | 2SC6011 |
Sanken |
Audio Amplification Transistor |
|