2SC6040 - Toshiba Semiconductor

2SC6040 Silicon NPN Transistor

www.DataSheet4U.com 2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • • High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V Unit: mm Maximum Ratings (Ta = 25°C) Characteris.

Features

l ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector emitter saturation voltage Base-emitter saturation voltage VCE (sat) VBE (sat) tr IB1 Test Condition VCB = 800 V, IE = 0 VEB = 8 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 0.2 A IC = 0.8 A, IB = 0.1 A IC = 0.8 A, IB = 0.1 A 20 µs VCC ≈ 200 V IB1 IB21 IC 667 Ω Min ― ― 800 410 50 60 50 ― ― Typ. ― ― ― ― ― ― ― ― ― Max 100 100 ― ― ― 120 ― 1.0 1.3 V V Unit µA µA V V Rise time ― ― 0.5 IB2 Switching time Storage time tstg INPUT Fall time tf OUTPUT ― .