·With TO-3PN package ·Complement to type 2SA2031 ·Wide area of safe operation ·Large current capacitance APPLICATIONS ·For audio frequency output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collect.
ollector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA; RBE=; IC=5mA; IE=0 IE=5mA; IC=0 IC=7.5 A;IB=0.75A IC=7.5A ; VCE=5V VCB=250V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=7.5A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=1A ; VCE=5V 60 35 200 15 MIN 230 250 6 0.2 www.datasheet4u.com 2SC5669 SYMBOL V(BR)CEO V(BR)CBO V(BREBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V V 2.0 1.5 100 100 160 V V µA µA pF MHz Switching times ton tstg tf .
Ordering number : ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5661 |
Rohm |
High-Frequency Amplifier Transistor | |
2 | 2SC5662 |
Rohm |
High-Frequency Amplifier Transistor | |
3 | 2SC5663 |
Rohm |
Low frequency transistor | |
4 | 2SC5663-C |
SeCoS |
NPN Transistor | |
5 | 2SC5665 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
6 | 2SC5666 |
Sanyo Semiconductor Corporation |
NPN Epitaxial Planar Silicon Transistor | |
7 | 2SC5604 |
NEC |
NPN SILICON RF TRANSISTOR | |
8 | 2SC5606 |
NEC |
NPN TRANSISTOR | |
9 | 2SC5607 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
10 | 2SC5609 |
Panasonic Semiconductor |
NPN Transistor | |
11 | 2SC5609G |
Panasonic |
Silicon NPN Transistor | |
12 | 2SC5610 |
Sanyo Semicon Device |
NPN TRANSISTOR |