2SC5609G - Panasonic

2SC5609G Silicon NPN Transistor

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G  Features  Package  High forward current transfer ratio hFE  Code SSSMini3-F2  Absolute Maximum Ratings Ta = 25°C  Pin Name Parameter Symbol Rating Unit Collector-base vol.

Features

 Package
 High forward current transfer ratio hFE
 Code SSSMini3-F2
 Absolute Maximum Ratings Ta = 25°C
 Pin Name Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V / Collector-emitter voltage (Base open) VCEO 50 V 1. Base 2. Emitter 3. Collector e Emitter-base voltage (Collector open) pe) Collector current nc d ge. ed ty Peak collector current sta tinu Collector power dissipation a e cycle iscon Junction temperature life d, d Storage temperature VEBO 7 V IC 100 mA ICP 200 mA PC 100 mW Tj 125 °C Tstg
  –55 to +125 °C
 Marking Sy.