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·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt.
ONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 1500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 4A; VCE= 5V fT Current-Gain—Bandwidth Product IE= 0.1A ; VCE= 10V Switching times tstg Storage Time tf Fall Time IC= 4A , IB1=0.8A; IB2= -1.6A; 5.0 V 1.5 V 1.0 mA 50 mA 5 9 3 MHz 5 μs 0.5 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificatio.
2SC5622 - Panasonic Semiconductor
Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5620 |
ETC |
Silicon NPN Transistor |
|
| 2 | 2SC5621 |
ETC |
NPN TRANSISTOR |
|
| 3 | 2SC5625 |
ISAHAYA ELECTRONICS |
SMALL-SIGNAL TRANSISTOR |
|
| 4 | 2SC5628 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5604 |
NEC |
NPN SILICON RF TRANSISTOR |
|
| 6 | 2SC5606 |
NEC |
NPN TRANSISTOR |
|
| 7 | 2SC5607 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 8 | 2SC5609 |
Panasonic Semiconductor |
NPN Transistor |
|
| 9 | 2SC5609G |
Panasonic |
Silicon NPN Transistor |
|
| 10 | 2SC5610 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 11 | 2SC5611 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 12 | 2SC5612 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|