Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1± 0.1 s Features q q q 0.425 1.25± 0.10 0.425 q High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing do.
q q q 0.425 1.25± 0.10 0.425 q High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0± 0.1 1.3± 0.1 0.65 0.65 0.7± 0.1 0.5± 0.1 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC547 |
Toshiba |
Silicon NPN epitaxial planar type Transistor | |
2 | 2SC5470 |
Hitachi |
Silicon NPN Triple Diffused Planar Transistor | |
3 | 2SC5472 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5474 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5476 |
Sanyo Electric |
NPN Epitaxial Planar Silicon Darlington Transistor | |
6 | 2SC5478 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
7 | 2SC5404 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
8 | 2SC5404 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC5404 |
INCHANGE |
NPN Transistor | |
10 | 2SC5405 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
11 | 2SC5406 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5406A |
Panasonic Semiconductor |
NPN TRANSISTOR |