2SC5405 - Panasonic Semiconductor

2SC5405 NPN TRANSISTOR

Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm s Features q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 q High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: > 5kV (TC=25˚C) Ratings 80 5.

Features

q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 q High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: > 5kV (TC=25˚C) Ratings 80 50 6 6 3 1 20 2.0 150
  –55 to +150 Unit V V V A A A W ˚C ˚C 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj T.