2SC5407 - Panasonic Semiconductor

2SC5407 NPN TRANSISTOR

Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1700 1700 600 5 20 15 8 100 3 150 –55 to +150 Unit V V V V A A A W.

Features

φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 5° 1 2 3 2.0 1:Base 2:Collector 3:Emitter TOP
  –3E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Em.