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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V.
ollector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IE= -0.25A; VCE= 12V Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IC= 1A; IB1= 0.15A; IB2= -0.45A; VCC= 250V; RL= 250Ω MIN TYP. MAX UNIT 550 V 0.5 V 1.2 V 100 μA 100 .
2SC5239 - Sanken electric
2SC5239 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=.
2SC5239 - SavantIC
·With TO-220C package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose appli.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5230 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5231 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5231A |
Sanyo |
NPN Epitaxial Planar Silicon Transistor |
|
| 4 | 2SC5231A |
ON Semiconductor |
RF Transistor |
|
| 5 | 2SC5232 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 6 | 2SC5232 |
Kexin |
Silicon NPN Transistor |
|
| 7 | 2SC5233 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC5237 |
Hitachi |
Silicon NPN Epitaxial Type Transistor |
|
| 9 | 2SC5238 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 12 | 2SC5200 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|