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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application 2SC5232 Unit: mm • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating.
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2010-04-18 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Collector-emitter on.
2SC5232 - Kexin
SMD Type Silicon NPN Epitaxial 2SC5232 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5230 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5231 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5231A |
Sanyo |
NPN Epitaxial Planar Silicon Transistor |
|
| 4 | 2SC5231A |
ON Semiconductor |
RF Transistor |
|
| 5 | 2SC5233 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 6 | 2SC5237 |
Hitachi |
Silicon NPN Epitaxial Type Transistor |
|
| 7 | 2SC5238 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 8 | 2SC5239 |
Sanken electric |
NPN TRANSISTOR |
|
| 9 | 2SC5239 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC5239 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 12 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|