2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ • High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5136 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base volta.
• High gain bandwidth product fT = 3.8 GHz typ
• High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz
Outline
SMPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC5136
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “TI
–”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 80 150
–55 to +150 Unit V V V mA mW °C °C
Attention: This device is very sensitive to electro static discharge. It is recomm.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5130 |
Sanken electric |
NPN TRANSISTOR | |
2 | 2SC5130 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC5130 |
INCHANGE |
NPN Transistor | |
4 | 2SC5132A |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Planar Transistor | |
5 | 2SC5137 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
6 | 2SC5138 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
7 | 2SC5139 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
8 | 2SC510 |
Toshiba |
SILICON NPN TRANSISTOR | |
9 | 2SC5100 |
Sanken electric |
NPN TRANSISTOR | |
10 | 2SC5100 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC5100 |
INCHANGE |
NPN Transistor | |
12 | 2SC5101 |
Sanken electric |
NPN TRANSISTOR |