2SC5132A - Hitachi Semiconductor

2SC5132A Silicon NPN Triple Diffused Planar Transistor

www.DataSheet4U.com 2SC5132A Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output TO–3PFM (N) Features • High breakdown voltage VCES = 1500 V, IC = 8 A • Built–in damper diode type • Isolated package TO-3P•FM B C 1 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item ——————————————.

Features

• High breakdown voltage VCES = 1500 V, IC = 8 A
• Built
  –in damper diode type
• Isolated package TO-3P
•FM B C 1 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item ——————————————————————————————————————————— Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1. Value at Tc = 25°C VCES VEBO IC ic(surge) PC
*1 Tj Tstg ID 1500 6 8 16 50 150
  –55 to +150 6 V V A A W °C °C A www.DataSheet4U.com Symbol Ratings Unit ————————————————————.