2SC4655G - Panasonic

2SC4655G Silicon NPN Transistor

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4655G Silicon NPN epitaxial planar type For high-frequency amplification ■ Features ■ Package • Optimum for RF amplification, oscillation, mixing, and IF of • Code FM/SAM radios SSMini3-F3 • SS-Mini type package, allowing downsizing of the equipment and automatic inserti.

Features

■ Package
• Optimum for RF amplification, oscillation, mixing, and IF of
• Code FM/SAM radios SSMini3-F3
• SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing /
■ Absolute Maximum Ratings Ta = 25°C
• Marking Symbol: K
• Pin Name 1. Base 2. Emitter 3. Collector Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 V a e cle con Collector current IC 30 mA lifecy , dis Coll.