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Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 s Features q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 .
q q
0.4
0.8±0.1
0.4
0.2
–0.05 0.15
–0.05
+0.1
Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings 30 20 5 30 125 125
–55 ~ +125
Unit V V V mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4650 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC4652 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC4655G |
Panasonic |
Silicon NPN Transistor |
|
| 4 | 2SC4655J |
Panasonic |
Silicon NPN Transistor |
|
| 5 | 2SC4656 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 6 | 2SC4656G |
Panasonic |
Silicon NPN Transistor |
|
| 7 | 2SC4656J |
Panasonic |
Silicon NPN Transistor |
|
| 8 | 2SC460 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC460 |
Renesas |
Silicon NPN epitaxial planar type Transistor |
|
| 10 | 2SC4600 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 11 | 2SC4600 |
Kexin |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SC4601 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|