Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4627J Silicon NPN epitaxial planar type 0.80±0.05 For high-frequency amplification 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 ■ Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5˚ • Optimum for RF amplification of FM/AM radios • High transition frequency fT 12 (0.80.
3
(0.375)
0.85
–+00..0035 1.60±0.05 5˚
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
12
(0.80)
• SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.27±0.02 (0.50)(0.50)
5˚
/
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
0 to 0.02 0.70
–+00..0035
V
0.10 max.
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4627 |
GME |
NPN High-frequency Transistor | |
2 | 2SC4627 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
3 | 2SC4627G |
Panasonic |
Silicon NPN Transistor | |
4 | 2SC4620 |
Rohm |
High-Voltage Switching Transistor | |
5 | 2SC4621 |
Panasonic |
Silicon NPN Transistor | |
6 | 2SC4622 |
INCHANGE |
NPN Transistor | |
7 | 2SC4623 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
8 | 2SC4624 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR | |
9 | 2SC4626 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
10 | 2SC4626G |
Panasonic |
Silicon NPN Transistor | |
11 | 2SC4626J |
Panasonic |
Silicon NPN Transistor | |
12 | 2SC4628 |
Hitachi Semiconductor |
NPN TRANSISTOR |