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Power Transistors 2SC4621 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features 15.0±0.3 11.0±0.2 5.0±0.2 3.2 0.7 q High-speed switching 12.5 3.5 15.0±0.2 q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.2±0.1 q Full-pack package which can be installed to the heat si.
15.0±0.3 11.0±0.2 5.0±0.2 3.2 0.7 q High-speed switching 12.5 3.5 15.0±0.2 q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.2±0.1 q Full-pack package which can be installed to the heat sink with / one screw 21.0±0.5 2.0±0.2 2.0±0.1 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit 16.2±0.5 Solder Dip n d tage. ued Collector to base voltage VCBO 500 V le s ntin VCES 500 V a e c co Collector to emitter voltage cy is VCEO 400 V n u t life ed, d Emitter to base voltage VEBO 7 V duc typ Peak collector current .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4620 |
Rohm |
High-Voltage Switching Transistor |
|
| 2 | 2SC4622 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC4623 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SC4624 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC4626 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC4626G |
Panasonic |
Silicon NPN Transistor |
|
| 7 | 2SC4626J |
Panasonic |
Silicon NPN Transistor |
|
| 8 | 2SC4627 |
GME |
NPN High-frequency Transistor |
|
| 9 | 2SC4627 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC4627G |
Panasonic |
Silicon NPN Transistor |
|
| 11 | 2SC4627J |
Panasonic |
Silicon NPN Transistor |
|
| 12 | 2SC4628 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|