Ordering number:EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications Features · Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions unit:mm 2045B [2SC4522] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 123 2..
· Adoption of FBET, MBIT process.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
Package Dimensions
unit:mm
2045B
[2SC4522]
6.5 5.0 4
2.3 0.5
5.5 1.5 7.0
unit:mm 2044B
0.85 0.7
0.6 123
2.3 2.3
0.8 1.6 7.5
1.2
1 : Base 0.5 2 : Collector
3 : Emitter 4 : Collector
SANYO : TP
[2SC4522] 6.5 2.3
5.0 0.5 4
0.8 5.5 1.5
2.5 7.0 1.2
0.85 1
0.6
2
3
2.3 2.3
0.5
1.2 0~0.2
1 : Base 2 : Collector 3 : Emitter 4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applicati.
SMD Type High-Speed Switching Applications 2SC4522 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4520 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
2 | 2SC4520 |
Kexin |
NPN Epitaxial Planar Silicon Transistor | |
3 | 2SC4521 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
4 | 2SC4521 |
Kexin |
NPN Epitaxial Planar Silicon Transistor | |
5 | 2SC4523 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC4523 |
Kexin |
Transistors | |
7 | 2SC4524 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR | |
8 | 2SC4525 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR | |
9 | 2SC4526 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR | |
10 | 2SC4527 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
11 | 2SC4528 |
Panasonic |
Silicon NPN Power transistor | |
12 | 2SC4529 |
Hitachi |
Silicon NPN Transistor |