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Ordering number:EN3140A NPN Epitaxial Planar Silicon Transistors 2SC4521 High-Speed Switching Applications Features · Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package. Package Dimensions unit:mm 2038A [2SC4521] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.
· Adoption of FBET, MBIT process.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small-sized package.
Package Dimensions
unit:mm 2038A
[2SC4521]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions Mounted on ceramic board (250mm2× 0..
2SC4521 - Kexin
SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4521 Features Adoption of FBET, MBIT process. Large cu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4520 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC4520 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC4522 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 4 | 2SC4522 |
Kexin |
Transistors |
|
| 5 | 2SC4523 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 6 | 2SC4523 |
Kexin |
Transistors |
|
| 7 | 2SC4524 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC4525 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC4526 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC4527 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC4528 |
Panasonic |
Silicon NPN Power transistor |
|
| 12 | 2SC4529 |
Hitachi |
Silicon NPN Transistor |
|