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2SC4366 Silicon NPN Epitaxial Application Low Frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4366 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO .
mA VCE = 6 V, IC = 100 mA (pulse) VCE = 6 V, IC = 1 mA I C = 300 mA, IB = 30 mA (pulse)
2
2SC4366
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Cuttent IC (mA) Typical Output Characteristics 50 40
35 30
25 20
40
100
30
20
15
50
10
10
5 µA
IB = 0 Ta = 25°C
0
50 100 150 Ambient Temperature Ta (°C)
0
2 4 6 8 10 Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 10,000 DC Current Transfer Ratio hFE VCE = 6 V Pulse 3,000 Ta = 75°C 1,000 25
–25 300 1.0 Base t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4361 |
Sanyo Semiconductor |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC4363 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC4364 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 4 | 2SC4365 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SC4367 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC4368 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2SC4369 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC4369 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC4300 |
Sanken electric |
Silicon NPN Transistor |
|
| 10 | 2SC4300 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC4300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SC4301 |
Sanken electric |
Silicon NPN Transistor |
|