TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 2SC4253 TV Final Picture IF Amplifier Applications · Good linearity of fT Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range .
mA, IB = 1.5 mA
VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 1 mA, f = 30 MHz VCE = 10 V, IC = 10 mA
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
25 ¾ ¾
V
20 70 200
¾ ¾ 0.2 V
¾ ¾ 1.5
¾ 1.1 1.6 pF
¾ ¾ 25 ps
250 600 ¾ MHz
Marking
1 2003-03-19
2SC4253
2 2003-03-19
2SC4253
3 2003-03-19
2SC4253
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the res.
SMD Type Silicon NPN Epitaxial 2SC4253 Transistors IC Features Good linearity of fT. 1 Emitter 2 Base 3 Collector Ab.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4250 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SC4250 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
3 | 2SC4251 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
4 | 2SC4251 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
5 | 2SC4252 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
6 | 2SC4252 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
7 | 2SC4256 |
Sanyo Semicon Device |
NPN Transistor | |
8 | 2SC4257 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
9 | 2SC4258 |
Isahaya Electronics |
Silicon NPN Transistor | |
10 | 2SC4200 |
Toshiba Semiconductor |
NPN EPITAXIAL TYPE TRANSISTOR | |
11 | 2SC4203 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Transistor | |
12 | 2SC4204 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |