TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications (common collector) 2SC4252 Unit: mm · Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collect.
V, IE = 0, f = 1 MHz VCB = 10 V, IC = 5 mA, f = 30 MHz
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 1.0 mA
12 ¾ ¾
V
40 100 250
1.5 2.1 ¾ GHz
¾ 1.1 1.4 pF
¾ 4.3 10 ps
Marking
1 2003-03-19
2SC4252
2 2003-03-19
2SC4252
3 2003-03-19
2SC4252
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to co.
·High Current-Gain Bandwidth Product fT = 2.1 GHz TYP. ·Low Output Capacitance- COB = 1.1 pF TYP. ·100% avalanche tested.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4250 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SC4250 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
3 | 2SC4251 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
4 | 2SC4251 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
5 | 2SC4253 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
6 | 2SC4253 |
Kexin |
Silicon NPN Epitaxial Type Transistor | |
7 | 2SC4256 |
Sanyo Semicon Device |
NPN Transistor | |
8 | 2SC4257 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
9 | 2SC4258 |
Isahaya Electronics |
Silicon NPN Transistor | |
10 | 2SC4200 |
Toshiba Semiconductor |
NPN EPITAXIAL TYPE TRANSISTOR | |
11 | 2SC4203 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Transistor | |
12 | 2SC4204 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |