·With TO-220Fa package · Wide area of safe operation (ASO) ·High-speed switching ·High collector to base voltage VCBO APPLICATIONS ·For high breakdown voltage highspeed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4004 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO I.
er breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA , IB=0 IC=0.2A ;IB=0.04A IC=0.2A; IB=0.04A VCB=900V; IE=0 VEB=7V; IC=0 IC=0.05A ; VCE=5V IC=0.5A ; VCE=5V IC=0.05A; VCE=10V;f=1MHz 6 3 4 MHz MIN 800 1.5 1.0 50 50 TYP. MAX UNIT V V V µA µA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton ts tf Turn-on time Storage time Fall time IC=0.2A ;IB1=0.04A; IB2=-0.04A;VCC=250V 1.0 3.0 1.0 µs µs µs 2 SavantIC Semicond.
Power Transistors 2SC4004 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdow.
·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC400 |
Toshiba |
SILICON PNP TRANSISTOR | |
2 | 2SC4001 |
NEC |
Silicon NPN Transistor | |
3 | 2SC4001 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | 2SC4002 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
5 | 2SC4002 |
ON Semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
6 | 2SC4002 |
SEMTECH |
NPN Silicon Triple Diffused Planar Transistor | |
7 | 2SC4002 |
Bluecolour |
NPN Silicon Triple Diffused Planar Transistor | |
8 | 2SC4003 |
GME |
NPN Epitaxial Planar Silicon Transistor | |
9 | 2SC4003 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
10 | 2SC4003 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
11 | 2SC4003 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
12 | 2SC4003 |
TRANSYS |
Plastic-Encapsulated Transistors |