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2SC4004 |
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| Part Number | 2SC4004 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.2A; IB= 40mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.2A; IB= 40mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
50 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
50 μA
hFE-1
DC Current Gain
IC= 50mA; VCE= 5V
6
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
3
fT
Current-Gain—Bandwidth Product
IC= 50mA; VCE= 10V; f= 1MHz
4
MHz
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 0.2A; ... |
| Document |
 2SC4004 Data Sheet
PDF 207.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC400 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 2 | 2SC4001 |
NEC |
Silicon NPN Transistor |
|
| 3 | 2SC4001 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SC4002 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 5 | 2SC4002 |
ON Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|