: ) SILICON NPN EPITAXIAL PLANAR TYPE (INDUSTRIAL APPLICATIONS) 2SC395A ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATIONS. Unit in mm 5.8 MAX. ^4.95MAX. FEATURES • High Transition Frequency : f T=200MHz(Min f ) • Low Saturation Voltage : VCE ( sat )=0.25V(Max.) at I c=10mA, Ig=lmA • High Switching Speed : t stg^25ns(Typ. 00.45 ,0.
• High Transition Frequency : f T=200MHz(Min f )
• Low Saturation Voltage
: VCE ( sat )=0.25V(Max.) at I c=10mA, Ig=lmA
• High Switching Speed : t stg^25ns(Typ.
00.45
,02.54
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL v CBO 'CEO v EBO
L stg
ELECTRICAL CHARACTERISTICS (Ta==25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
I CB0 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3950 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
2 | 2SC3951 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
3 | 2SC3952 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
4 | 2SC3953 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
5 | 2SC3954 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
6 | 2SC3955 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
7 | 2SC3956 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
8 | 2SC3957 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
9 | 2SC3900 |
Sanyo |
Epitaxial Planar Silicon Transistor | |
10 | 2SC3901 |
Sanyo |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
11 | 2SC3901 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
12 | 2SC3902 |
Sanyo Semicon Device |
PNP/NPN Transistors |