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2SC3957 Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline MPAK-4 2 1 3 1 4 3 1. Collector 2. Emitter 3. Base 4. NC 2 2SC3957 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction tem.
0.1 mA
*2
hFE2
* 1 hFE3
* 1 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat)
V V
Notes: 1. The 2SC3957 is grouped by hFE as follows. 2. Pulse test Mark hFE1 hFE2 hFE3 GIA GIB 2000 to 100000 5000 to 100000 3000 min 3000 min 10000 min 10000 min
2
2SC3957
Typical Output Characteristics
10
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA)
250
200
100
150
8
6
4
100 2 µA PC = 150 mW IB = 0 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V)
50
50
0
50 100 150 Ambient Temperature Ta (°C)
DC .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3950 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 2 | 2SC3951 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 3 | 2SC3952 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 4 | 2SC3953 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 5 | 2SC3954 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 6 | 2SC3955 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 7 | 2SC3956 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 8 | 2SC395A |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 9 | 2SC3900 |
Sanyo |
Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC3901 |
Sanyo |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 11 | 2SC3901 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 12 | 2SC3902 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|