·High Speed Switching ·High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCE.
) Collector-Emitter Sustaining Voltage IC= 10mA ; IB=0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 1.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8.0A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 15 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 10 fT Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V;f= 0.5MHz 2 MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 8A ;IB1= 1.6A; IB2= -1.6A; VCC= 200V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3912 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SC3913 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SC3914 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SC3915 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SC3916 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | 2SC3917 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
7 | 2SC3918 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
8 | 2SC3919 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
9 | 2SC3900 |
Sanyo |
Epitaxial Planar Silicon Transistor | |
10 | 2SC3901 |
Sanyo |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
11 | 2SC3901 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
12 | 2SC3902 |
Sanyo Semicon Device |
PNP/NPN Transistors |