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2SC3910 |
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| Part Number | 2SC3910 |
| Manufacturer | INCHANGE |
| Description | ·High Speed Switching ·High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... |
| Features |
) Collector-Emitter Sustaining Voltage IC= 10mA ; IB=0
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 1.6A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8.0A; IB= 1.6A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
15
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
10
fT
Current-Gain—Bandwidth Product
IC= 0.5A;VCE= 10V;f= 0.5MHz
2
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 8A ;IB1= 1.6A; IB2= -1.6A; VCC= 200V
... |
| Document |
 2SC3910 Data Sheet
PDF 208.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3912 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3913 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC3914 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SC3915 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SC3916 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|