2SC3907S - INCHANGE

2SC3907S NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1516S ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S.

Features

ltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V ICBO Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V  hFE-1 Classifications R O 55-110 90-180 2SC3907S MIN TYP. MAX UNIT 180 V 2.0 V 1.5 V 5 μA 5 μA 55 180 35 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is prese.