2SC3904 - Panasonic Semiconductor

2SC3904 Silicon NPN Transistor

Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.8 –0.3 +0.2 s Features q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction tempera.

Features

q q 0.65±0.15 +0.25 1.5
  –0.05 0.65±0.15 0.95 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1.1
  –0.1 (Ta=25˚C) Ratings 15 10 2 65 200 150
  –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO
  –236 EIAJ:SC
  –59 Mini Type Package Marking symbol : 3S s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition fr.